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products and specifications discussed herein ar e subject to change by aptina without notice. MT9N011: 9mp cmos digital image sensor die features pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 1 ?2008 aptina imaging corporation all rights reserved. 1/2.3-inch, 9mp cmos active-pixel digital image sensor die MT9N011 die data sheet for the product data sheet, refer to aptinas web site: www.aptina.com features ? digitalclarity ? cmos imaging technology ?low dark current ? simple two-wire serial interface ? auto black-level calibration ? support for external mechanical shutter ? support for external led or xenon flash ? high frame rate preview mode with arbitrary downsize scaling from maximum resolution ? programmable controls: gain, horizontal and vertical blanking, auto black level offset correction, frame size/rate, exposure, left-right and top-bo ttom image reversal, window size, and panning ? data interfaces: parallel or serial ? ccp2-compliant, sub-low-voltage, differential signaling (sub-lvds) ? one- or two-lane mobile industry processor interface (mipi) ? on-die phase-lock loop (pll) oscillator ? bayer pattern down-size scaler ? one-time programmable (otp) memory for storing module information ? superior low-light performance ? integrated position-based color and lens shading correction general physical specifications ? die thickness: 200m 12mwafer thickness: 750m 25m (consult factory fo r other thickness) ? back side wafer surface of bare silicon ? typical metal 2 thickness: 3.1k? ? typical metal 3 thickness: 3.1k? ? typical metal 4 thickness: 4.15k? ? metallization composition: 99. 5% al and 0.5% cu over ti ? typical topside passivation: 2.2k? nitride over 5.0k? of undoped oxide ? passivation openings (min): 75m x 90m order information die:MT9N011d00stcz wafer: MT9N011w00stcz notes: 1. please consult die distributo r or factory before ordering to verify long-term availability of these die products. MT9N011d00stcz product# chrom temp form die data base testing level die database ? die outline, see figure 5 on page 14figure 5 on page 14 ? singulated die size: 8672m 25m x 8369m 25m ? bond pad identification tables, see pages 8?13 key performance parameters ? optical format: 1/2.3-inch (4:3) ? active imager size: 6.104mm(h) x 4.578mm(v), 7.630mm diagonal ? active pixels: 3488h x 2616v ? pixel size: 1.75m x 1.75m ? chief ray angle: 25 ? color filter array: rgb bayer pattern ? shutter type: electronic rolling shutter (ers) with global reset release (grr) ? input clock frequency: 6?48 mhz ?maximum data rate ? parallel: 96 mp/s at 96 mhz pixclk ? ccp2: 640 mb/s ? mipi (two-lane): 1.536 gb/s ?frame rate ? full resolution: programmable up to 13.2 fps serial, 9.7 fps parallel ? vga: 640h x 480v with 2x sk ip and 2x bin: 74 fps (full power), 50 fps (low power) ? adc resolution: 12-bit, on-die ? responsivity: 0.44 v/lux-sec (at 550nm) ? dynamic range: 65db ?snr max: 35db ? supply voltage ? i/o digital: 1.7?1.9v (1.8v nomi nal) or 2.4?3.1v (2.8v nomi- nal) ? digital: 1.7?1.9v (1.8v nominal) ? analog: 2.6?3.1v (2.8v nominal) ? power consumption ? full resolution: 500mw ? preview: 210mw low power vga ? standby: 500w (typical, extclk disabled) ? operating temperature: ?30c to +70c (at junction) options designator ?form ? die d ?testing ? standard (level 1) probe c1
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 2 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die general description general description the aptina? MT9N011 is a 1/2.3-inch cmos ac tive-pixel digital im age sensor die with an active pixel array of 3488h x 2616v includ ing border pixels. it incorporates sophisti- cated on-die camera functions such as windowing, mirroring, column and row skip modes, and snapshot mode. it is programmab le through a simple two-wire serial inter- face and has very low power consumption. the MT9N011 digital image sensor die features digitalclarity?our breakthrough low- noise cmos imaging technology that achi eves near-ccd image quality (based on signal-to-noise ratio and low-light sensitivity) while maintaining the inherent size, cost, and integration advantages of cmos. when operated in its default mode, the sensor generates a full resolution image at 13.2 frames per second (fps). an on-die analog-to-digital converter (adc) generates a 12-bit value for each pixel. die testing procedures aptina imager die products are tested with a standard probe (c1) test level. wafer probe is performed at an elevated temperature to ensure product functionality in aptina?s stan- dard package. because the package environment is not within aptina?s control, the user must determine the necessary heat sink requirements to ensure that the die junction temperature remains within specified limits. image quality is verified through various imag ing tests. the probe functional test flow provides test coverage for the on-die adc, logic, serial interface bus, and pixel array. test conditions, margins, limits, and test sequen ce are determined by individual product yields and reliability data. aptina retains a wafer map of each wafer as part of the probe records, along with a lot summary of wafer yields for each lot probed . aptina reserves the right to change the probe program at any time to improve the reli ability, packaged device yield, or perfor- mance of the product. die users may experience differences in performance relative to aptina?s data sheets. this is due to differences in package capacitance, inductance, resistance, and trace length. functional specifications specifications provided here are for reference only. for target functional and parametric specifications, refer to the product da ta sheet found on aptina?s web site. bonding instructions the MT9N011 imager die has 97 bond pads. refer to table 1 and table 2 on pages 8?13 for a complete list of bond pads and coordinates. the die also has several pads defined as ?do not use.? these pads are reserved for engi- neering purposes and should not be used. bonding these pads could result in a nonfunctional die. figures 1 through 4 on pages 4 through 7 show the typical die connections. for low- noise operation, the MT9N011 die requires separate supplies for analog and digital power. incoming digital and analog ground co nductors can be tied together next to the
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 3 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die storage requirements die. both power supply rails should be decoupled from ground using capacitors as close as possible to the die. the use of inductance filters is not recommended on the power supplies or output signals. the MT9N011 also supports different digital core (v dd /d gnd ) and i/o power (v dd _io/ d gnd ) power domains that can be at different voltages. the pll requires a clean power source (v dd _pll). storage requirements aptina die products are packaged for shipping in a cleanroom environment. upon receipt, the customer should transfer the dieor wafers to a similar environment for storage. aptina recommends the dieor wafers be maintained in a filtered nitrogen atmo- sphere until removed for assembly. the moistu re content of the storage facility should be maintained at 30% 10% relative humidity. esd damage precautions are necessary during handling. the die must be in an esd-protected environment at all times for inspection and assembly. wafer saw the die size (stepping interval) provided is measured from the center of the die street on one side of the die to the center of the die street on the other side of the die. a singulated die is approximately 42m smaller in length and width. the dimensional tolerance of a singulated die is 25m. for example, if the die width (stepping interval) is 5,080m and the die length (stepping interval ) is 7,620m, the dimensions of the singulated die will be 5,038m 25m by 7,578m 25m. wafer-level processing customers should choose the wafer form when post-processing of die is required. this includes adding extra passivation or metal layers or bumping of the bond pads. for these customers, the street widths are provided in the die outline. also, a reference from the center of bond pad 1 to the center of th e intersection of two streets is provided for easy alignment.
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 4 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die typical connections typical connections figures 1 through 4 on pages 4 through 7 show typical configuration schematics for the MT9N011 operating in serial and parallel modes. figure 1: typical configuration: serial ccp2 pixel data interface notes: 1. all power supplies should be adequately decoupled. 2. aptina recommends a resistor value of 1.5k , but the value may be greater for slower two-wire speed. 3. this pull-up resistor is not required if the controller drives a valid logic level on sclk at all times. 4. also referred to as reset_bar. 5. v pp , which can be used during the module manufacturing process, is not shown in figure 1. this pad is left unconnected during normal operation. 6. the parallel interface output pads can be left unconnected if the serial output interface is used. 7. aptina recommends that 0.1 f and 10 f decoupling capacitors for each power supply are mounted as close as possible to the pad. actual values and results may vary depending on layout and design consid- erations. v dd _io v dd vaa v dd _pll vaapix v dd v dd _tx0 v aa 4 vaapix 4 master clock (6C48 mhz) s data sclk xshutdown 4 test clk_n clk_p data0_p extclk d gnd a gnd digital ground analog ground gnd_pll digital core power 1 digital phy power 1 analog power 1 to controller from controller data0_n v dd _io v dd _pll pll power 1 digital i/o power 1 1.5k 2 1.5k 2, 3 pixgnd v dd _tx0 analog power 1
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 5 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die typical connections figure 2: typical configuration: serial two-lane mipi pixel data interface notes: 1. all power supplies should be adequately decoupled. 2. aptina recommends a resistor value of 1.5k , but the value may be greater for slower two-wire speed. 3. this pull-up resistor is not required if the controller drives a valid logic level on sclk at all times. 4. also referred to as xshutdown. 5. v pp , which can be used during the module manufacturing process, is not shown in figure 2. this pad is left unconnected during normal operation. 6. the parallel interface output pads can be left unconnected if the serial output interface is used. 7. aptina recommends that 0.1 f and 10 f decoupling capacitors for each power supply are mounted as close as possible to the pad. actual values and results may vary depending on layout and design consid- erations. v dd _io v dd _tx0 v dd _pll v dd v aa v dd v dd _tx0 v aa vaapix master clock (6C48 mhz) s data sclk reset_bar 4 test clk_n data1_n clk_p data0_p extclk pixgnd a gnd digital ground analog ground d gnd gnd_pll digital core power 1 digital phy power 1 analog power 1 to controller from controller data1_p data0_n v dd _io v dd _pll pll power 1 digital i/o power 1 1.5k 2 1.5k 2, 3 analog power 1 vaapix gpi [3:0]
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 6 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die typical connections figure 3: typical configuration: parallel ccp2 pixel data interface notes: 1. all power supplies should be adequately decoupled. 2. aptina recommends a resistor value of 1.5k , but the value may be greater for slower two-wire speed. 3. this pull-up resistor is not required if the controller drives a valid logic level on sclk at all times. 4. also referred to as reset_bar. 5. v pp , which can be used during the module manufacturing process, is not shown in figure 3. this pad is left unconnected during normal operation. 6. the parallel interface output pads can be left unconnected if the serial output interface is used. 7. aptina recommends that 0.1 f and 10 f decoupling capacitors for each power supply are mounted as close as possible to the pad. actual values and results may vary depending on layout and design consid- erations. v dd master clock (6C48 mhz) s data sclk xshutdown 4 test flash frame_valid shutter d out [11:0] extclk gnd_pll agnd digital ground analog ground digital core power 1 to controller from controller line_valid pixclk v dd _io digital i/o power 1 1.5k 2 1.5k 2, 3 v dd _io v dd _pll v aa v dd vaapix v aa vaapix d gnd pixgnd analog power 1 analog power 1 v dd _pll pll power 1
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 7 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die typical connections figure 4: typical configuration: parallel mipi pixel data interface notes: 1. all power supplies should be adequately decoupled. 2. aptina recommends a resistor value of 1.5k , but the value may be greater for slower two-wire speed. 3. this pull-up resistor is not required if the controller drives a valid logic level on sclk at all times. 4. the gpi pins can be statically pulled high or low to be used as module ids, or they can be programmed to perform special functions (trigger, oe_n, s addr , standby) to be dynamically controlled. 5. v pp , which can be used during the module manufacturing process, is not shown in figure 4. this pad is left unconnected during normal operation. 6. the parallel interface output pads can be left unconnected if the serial output interface is used. 7. aptina recommends that 0.1 f and 10 f decoupling capacitors for each power supply are mounted as close as possible to the pad. actual values and results may vary depending on layout and design consid- erations. v dd master clock (6C48 mhz) s data sclk reset_bar test gpi [3:0] 4 flash frame_valid shutter d out [11:0] extclk d gnd gnd_pll agnd digital ground analog ground digital core power 1 to controller from controller line_valid pixclk v dd _io digital i/o power 1 1.5k 2 1.5k 2, 3 v dd _io v dd _pll v aa v dd vaapix v aa vaapix pixgnd analog power 1 analog power 1 v dd _pll pll power 1
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 8 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables bond pad identification tables table 1: MT9N011 bond pad location from center of pad 1 pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches 1v dd _io9 0.00 0.00 0.0000000 0.0000000 2 sdata 170.53 0.00 0.0067138 0.0000000 3 sclk 341.05 0.00 0.0134272 0.0000000 4 test 511.57 0.00 0.0201406 0.0000000 5 reset_bar 682.09 0.00 0.0268539 0.0000000 6v dd _io10 1015.01 0.00 0.0399610 0.0000000 7d gnd 10 1185.53 0.00 0.0466744 0.0000000 8v dd 5 1356.05 0.00 0.0533878 0.0000000 9 extclk 1526.68 0.00 0.0601053 0.0000000 10 gnd_pll 1697.68 0.00 0.0668378 0.0000000 11 v dd _pll 1868.19 0.00 0.0735508 0.0000000 12 v dd _tx0 2793.87 0.00 0.1099949 0.0000000 13 clk_p 3021.97 0.00 0.1189752 0.0000000 14 clk_n 3251.97 0.00 0.1280303 0.0000000 15 data0_p 3481.98 0.00 0.1370856 0.0000000 16 data0_n 3711.98 0.00 0.1461407 0.0000000 17 data1_p 3941.98 0.00 0.1551961 0.0000000 18 data1_n 4171.98 0.00 0.1642512 0.0000000 19 a gnd 14 8226.73 C224.46 0.3238870 C0.0088370 20 v aa 12 8226.73 C394.98 0.3238870 C0.0155504 21 a gnd 13 8226.73 C565.50 0.3238870 C0.0222638 22 v aa 11 8226.73 C736.02 0.3238870 C0.0289772 23 a gnd 12 8226.73 C906.54 0.3238870 C0.0356906 24 v aa 10 8226.73 C1077.06 0.3238870 C0.0424039 25 a gnd 11 8226.73 C1247.58 0.3238870 C0.0491173 26 v aa 9 8226.73 C1418.10 0.3238870 C0.0558307 27 dnu 2 8226.73 C1588.62 0.3238870 C0.0625441 28 a gnd 10 8226.73 C1759.14 0.3238870 C0.0692575 29 dnu 8226.73 C1929.66 0.3238870 C0.0759709 30 v aa 8 8226.73 C2100.18 0.3238870 C0.0826843 31 a gnd 9 8226.73 C2270.70 0.3238870 C0.0893976 32 v aa 7 8226.73 C3388.36 0.3238870 C0.1334000 33 a gnd 8 8226.73 C3558.88 0.3238870 C0.1401134 34 pixgnd 8226.73 C3729.40 0.3238870 C0.1468268 35 vaapix5 8226.73 C3916.16 0.3238870 C0.1541795 36 vaapix4 8226.73 C4086.68 0.3238870 C0.1608929 37 vaapix3 8226.73 C4257.20 0.3238870 C0.1676063 38 vaapix2 8226.73 C4427.72 0.3238870 C0.1743197 39 vaapix1 8226.73 C4598.24 0.3238870 C0.1810331 40 v pp 8226.73 C5533.78 0.3238870 C0.2178654 41 a gnd 7 8226.73 C5704.30 0.3238870 C0.2245787 42 v aa 6 8226.73 C5874.82 0.3238870 C0.2312921 43 a gnd 6 8226.73 C6045.34 0.3238870 C0.2380055
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 9 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables 44 v aa 5 8226.73 C6215.86 0.3238870 C0.2447189 45 dnu 8226.73 C6371.88 0.3238870 C0.2508614 46 a gnd 5 8226.73 C6542.40 0.3238870 C0.2575748 47 dnu 8226.73 C6712.92 0.3238870 C0.2642882 48 v aa 4 8226.73 C6883.44 0.3238870 C0.2710016 49 a gnd 4 8226.73 C7053.96 0.3238870 C0.2777150 50 v aa 3 8226.73 C7224.48 0.3238870 C0.2844283 51 a gnd 3 8226.73 C7395.00 0.3238870 C0.2911417 52 v aa 2 8226.73 C7565.52 0.3238870 C0.2978551 53 a gnd 2 8226.73 C7736.04 0.3238870 C0.3045685 54 v aa 1 8226.73 C7906.56 0.3238870 C0.3112819 55 a gnd 1 8226.73 C8077.08 0.3238870 C0.3179953 56 v dd 1 C230.83 C7589.88 C0.0090878 C0.2988142 57 d gnd 1 C230.83 C7419.36 C0.0090878 C0.2921008 58 v dd _io1 C230.83 C7248.84 C0.0090878 C0.2853874 59 gpi0 C230.83 C7078.32 C0.0090878 C0.2786740 60 gpi1 C230.83 C6907.80 C0.0090878 C0.2719606 61 gpi2 C230.83 C6737.28 C0.0090878 C0.2652472 62 gpi3 C230.83 C6566.76 C0.0090878 C0.2585339 63 shutter C230.83 C6388.70 C0.0090878 C0.2515236 64 flash C230.83 C6182.22 C0.0090878 C0.2433945 65 d gnd 2 C230.83 C6011.70 C0.0090878 C0.2366811 66 v dd _io2 C230.83 C5841.18 C0.0090878 C0.2299677 67 pixclk C230.83 C5670.66 C0.0090878 C0.2232543 68 frame_valid C230.83 C5464.18 C0.0090878 C0.2151252 69 line_valid C230.83 C5257.70 C0.0090878 C0.2069961 70 v dd 2 C230.83 C5087.18 C0.0090878 C0.2002827 71 d gnd 3 C230.83 C4916.66 C0.0090878 C0.1935693 72 v dd _io3 C230.83 C4746.14 C0.0090878 C0.1868559 73 d out 6 C230.83 C4575.62 C0.0090878 C0.1801425 74 d out 5 C230.83 C4369.14 C0.0090878 C0.1720134 75 d gnd 4 C230.83 C4198.62 C0.0090878 C0.1653000 76 v dd _io4 C230.83 C4028.10 C0.0090878 C0.1585866 77 d out 7 C230.83 C3857.58 C0.0090878 C0.1518732 78 d out 4 C230.83 C3651.10 C0.0090878 C0.1437441 79 d gnd 5 C230.83 C3480.58 C0.0090878 C0.1370307 80 v dd _io5 C230.83 C3310.06 C0.0090878 C0.1303173 81 d out 8 C230.83 C3139.54 C0.0090878 C0.1236039 82 d out 3 C230.83 C2933.06 C0.0090878 C0.1154748 83 v dd 3 C230.83 C2762.54 C0.0090878 C0.1087614 84 d gnd 6 C230.83 C2592.02 C0.0090878 C0.1020480 85 v dd _io6 C230.83 C2421.50 C0.0090878 C0.0953346 86 d out 9 C230.83 C2250.98 C0.0090878 C0.0886213 87 d out 2 C230.83 C2044.50 C0.0090878 C0.0804921 88 d gnd 7 C230.83 C1873.98 C0.0090878 C0.0737787 table 1: MT9N011 bond pad location from center of pad 1 (continued) pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 10 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables notes: 1. reference to center of each bond pad from center of bond pad number 1. 2. dnu = do not use. see bonding instructions on page 2. 89 v dd _io7 C230.83 C1703.46 C0.0090878 C0.0670654 90 d out 10 C230.83 C1532.94 C0.0090878 C0.0603520 91 d out 1 C230.83 C1326.46 C0.0090878 C0.0522228 92 d gnd 8 C230.83 C1155.94 C0.0090878 C0.0455094 93 v dd _io8 C230.83 C985.42 C0.0090878 C0.0387961 94 d out 11 C230.83 C814.90 C0.0090878 C0.0320827 95 d out 0 C230.83 C608.42 C0.0090878 C0.0239535 96 v dd 4 C230.83 C437.90 C0.0090878 C0.0172402 97 d gnd 9 C230.83 C267.38 C0.0090878 C0.0105268 table 1: MT9N011 bond pad location from center of pad 1 (continued) pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 11 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables table 2: MT9N011 bond pad location from center of die (0, 0) pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches 1v dd _io9 C3997.95 4077.11 C0.1573996 0.1605161 2 sdata C3827.42 4077.11 C0.1506858 0.1605161 3 sclk C3656.90 4077.11 C0.1439724 0.1605161 4 test C3486.38 4077.11 C0.1372591 0.1605161 5 reset_bar C3315.86 4077.11 C0.1305457 0.1605161 6v dd _io10 C2982.94 4077.11 C0.1174386 0.1605161 7d gnd 10 C2812.42 4077.11 C0.1107252 0.1605161 8v dd 5 C2641.90 4077.11 C0.1040118 0.1605161 9 extclk C2471.28 4077.11 C0.0972943 0.1605161 10 gnd_pll C2300.27 4077.11 C0.0905618 0.1605161 11 v dd _pll C2129.76 4077.11 C0.0838488 0.1605161 12 v dd _tx0 C1204.08 4077.11 C0.0474047 0.1605161 13 clk_p C975.98 4077.11 C0.0384244 0.1605161 14 clk_n C745.98 4077.11 C0.0293693 0.1605161 15 data0_p C515.98 4077.11 C0.0203140 0.1605161 16 data0_n C285.98 4077.11 C0.0112589 0.1605161 17 data1_p C55.97 4077.11 C0.0022035 0.1605161 18 data1_n 174.03 4077.11 0.0068516 0.1605161 19 a gnd 14 4228.78 3852.65 0.1664874 0.1516791 20 v aa 12 4228.78 3682.13 0.1664874 0.1449657 21 a gnd 13 4228.78 3511.61 0.1664874 0.1382524 22 v aa 11 4228.78 3341.09 0.1664874 0.1315390 23 a gnd 12 4228.78 3170.57 0.1664874 0.1248256 24 v aa 10 4228.78 3000.05 0.1664874 0.1181122 25 a gnd 11 4228.78 2829.53 0.1664874 0.1113988 26 v aa 9 4228.78 2659.01 0.1664874 0.1046854 27 dnu 2 4228.78 2488.49 0.1664874 0.0979720 28 a gnd 10 4228.78 2317.97 0.1664874 0.0912587 29 dnu 4228.78 2147.45 0.1664874 0.0845453 30 v aa 8 4228.78 1976.93 0.1664874 0.0778319 31 a gnd 9 4228.78 1806.41 0.1664874 0.0711185 32 v aa 7 4228.78 688.75 0.1664874 0.0271161 33 a gnd 8 4228.78 518.23 0.1664874 0.0204028 34 pixgnd 4228.78 347.71 0.1664874 0.0136894 35 vaapix5 4228.78 160.95 0.1664874 0.0063366 36 vaapix4 4228.78 C9.57 0.1664874 C0.0003768 37 vaapix3 4228.78 C180.09 0.1664874 C0.0070902 38 vaapix2 4228.78 C350.61 0.1664874 C0.0138035 39 vaapix1 4228.78 C521.13 0.1664874 C0.0205169 40 v pp 4228.78 C1456.67 0.1664874 C0.0573492 41 a gnd 7 4228.78 C1627.19 0.1664874 C0.0640626 42 v aa 6 4228.78 C1797.71 0.1664874 C0.0707760 43 a gnd 6 4228.78 C1968.23 0.1664874 C0.0774894 44 v aa 5 4228.78 C2138.75 0.1664874 C0.0842028 45 dnu 4228.78 C2294.77 0.1664874 C0.0903453
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 12 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables 46 a gnd 5 4228.78 C2465.29 0.1664874 C0.0970587 47 dnu 4228.78 C2635.81 0.1664874 C0.1037720 48 v aa 4 4228.78 C2806.33 0.1664874 C0.1104854 49 a gnd 4 4228.78 C2976.85 0.1664874 C0.1171988 50 v aa 3 4228.78 C3147.37 0.1664874 C0.1239122 51 a gnd 3 4228.78 C3317.89 0.1664874 C0.1306256 52 v aa 2 4228.78 C3488.41 0.1664874 C0.1373390 53 a gnd 2 4228.78 C3658.93 0.1664874 C0.1440524 54 v aa 1 4228.78 C3829.45 0.1664874 C0.1507657 55 a gnd 1 4228.78 C3999.97 0.1664874 C0.1574791 56 v dd 1 C4228.78 C3512.77 C0.1664874 C0.1382980 57 d gnd 1 C4228.78 C3342.25 C0.1664874 C0.1315846 58 v dd _io1 C4228.78 C3171.73 C0.1664874 C0.1248713 59 gpi0 C4228.78 C3001.21 C0.1664874 C0.1181579 60 gpi1 C4228.78 C2830.69 C0.1664874 C0.1114445 61 gpi2 C4228.78 C2660.17 C0.1664874 C0.1047311 62 gpi3 C4228.78 C2489.65 C0.1664874 C0.0980177 63 shutter C4228.78 C2311.59 C0.1664874 C0.0910075 64 flash C4228.78 C2105.11 C0.1664874 C0.0828783 65 d gnd 2 C4228.78 C1934.59 C0.1664874 C0.0761650 66 v dd _io2 C4228.78 C1764.07 C0.1664874 C0.0694516 67 pixclk C4228.78 C1593.55 C0.1664874 C0.0627382 68 frame_valid C4228.78 C1387.07 C0.1664874 C0.0546091 69 line_valid C4228.78 C1180.59 C0.1664874 C0.0464799 70 v dd 2 C4228.78 C1010.07 C0.1664874 C0.0397665 71 d gnd 3 C4228.78 C839.55 C0.1664874 C0.0330531 72 v dd _io3 C4228.78 C669.03 C0.1664874 C0.0263398 73 d out 6 C4228.78 C498.51 C0.1664874 C0.0196264 74 d out 5 C4228.78 C292.03 C0.1664874 C0.0114972 75 d gnd 4 C4228.78 C121.51 C0.1664874 C0.0047839 76 v dd _io4 C4228.78 49.01 C0.1664874 0.0019295 77 d out 7 C4228.78 219.53 C0.1664874 0.0086429 78 d out 4 C4228.78 426.01 C0.1664874 0.0167720 79 d gnd 5 C4228.78 596.53 C0.1664874 0.0234854 80 v dd _io5 C4228.78 767.05 C0.1664874 0.0301988 81 d out 8 C4228.78 937.57 C0.1664874 0.0369122 82 d out 3 C4228.78 1144.05 C0.1664874 0.0450413 83 v dd 3 C4228.78 1314.57 C0.1664874 0.0517547 84 d gnd 6 C4228.78 1485.09 C0.1664874 0.0584681 85 v dd _io6 C4228.78 1655.61 C0.1664874 0.0651815 86 d out 9 C4228.78 1826.13 C0.1664874 0.0718949 87 d out 2 C4228.78 2032.61 C0.1664874 0.0800240 88 d gnd 7 C4228.78 2203.13 C0.1664874 0.0867374 89 v dd _io7 C4228.78 2373.65 C0.1664874 0.0934508 90 d out 10 C4228.78 2544.17 C0.1664874 0.1001642 table 2: MT9N011 bond pad location from center of die (0, 0) pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 13 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die bond pad identification tables notes: 1. reference to center of each bond pad from center of bond pad number 1. 2. dnu = do not use. see bonding instructions on page 2. 91 d out 1 C4228.78 2750.65 C0.1664874 0.1082933 92 d gnd 8 C4228.78 2921.17 C0.1664874 0.1150067 93 v dd _io8 C4228.78 3091.69 C0.1664874 0.1217201 94 d out 11 C4228.78 3262.21 C0.1664874 0.1284335 95 d out 0 C4228.78 3468.69 C0.1664874 0.1365626 96 v dd 4 C4228.78 3639.21 C0.1664874 0.1432760 97 d gnd 9 C4228.78 3809.73 C0.1664874 0.1499894 table 2: MT9N011 bond pad location from center of die (0, 0) pad number pad name x 1 microns y 1 microns x 1 inches y 1 inches
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 14 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die die features die features notes: 1. die outline (top view) die street widths are not drawn to scale. figure 5: die outline (top view) die center (0m, 0m) optical array offset from die center (C76.50m, C115.10m) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 +y -y +x -x center of pad 1 (table 1) or center of die (table 2) first clear pixel (col. 94, row 52) pixel array last clear pixel (col. 3,677, row 2,763) die id and lo g o location
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 15 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die physical specifications physical specifications table 3: physical dimensions feature dimensions wafer diameter 200mm (8in) die thickness 200 m 12 m wafer thickness 750 m 25 m singulated die size (after wafer saw) width (x dimension): length (y dimension): 8672 m 25 m 8369 m 25 m die size (stepping interval) 8713.85 m x 8410.55 m street width along x-axis (dsw_x) 101.65 m street width along y-axis (dsw_y) 101.65 m center of streets (cos) (relative to center of pad 1) x = C358.98 m, y = 128.17 m bond pad size (min) 85 m x 100 m passivation openings (min) 75 m x 90 m minimum bond pad pitch 170.52 m center of pad 1 to center of die x = 3589.90 m, y = ? 3808.28 m optical array offset optical center from die center: optical center from center of pad 1: x = ? 76.50 m, y = ? 115.10 m x = 3921.46 m, y = ? 4192.21 m first clear pixel (col. 94, row 52) from die center: from center of pad 1: x = 3,058.64 m, y = 2,257.02 m x = 7056.59 m, y = ? 1820.10 m last clear pixel (col. 3,677, row 2,763) from die center: from center of pad 1: x = ? 3211.62 m, y = ? 2487.13 m x = 786.34 m, y = ? 6564.24 m die offset from center of wafer to center of die (wafer notch at right) x = C2.999925mm, y = C1.435875mm
pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 16 ?2008 aptina imaging corporation. all rights reserved. MT9N011: 9mp cmos digital image sensor die physical specifications figure 6: die orientation in reconstructed wafer singulated die size: width: 8,672m 25m length: 8,369m 25m number of rows: 20 number of columns: 20 reconstructed wafer street width: 762m dicing tape: adwill d-175 film frame: disco maximum total die count: 320 276mm 276mm bond pad 1 orientation 762m 8,369m 8,672m 762m
10 eunos road 8 13-40, singapore post center, singapore 408600 prodmktg@aptina.com www.aptina.com aptina, aptina imaging, digitalclarity, and the aptina logo are the property of aptina imaging corporation all other trademarks are the property of their respective owners. this data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. alt hough considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. MT9N011: 9mp cmos digital image sensor die revision history pdf: 1207848895/source: 0316150683 aptina reserves the right to change products or specifications without notice. MT9N011_dds - rev. c; pub. 5/10 en 17 ?2008 aptina imaging corporation all rights reserved. revision history rev. c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/10 ? updated to non-confidential rev. b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/10 ? updated to aptina template rev. a, production. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6/08 ?initial release.

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